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savantic semiconductor product specification silicon npn power transistors 2SC2987 d escription with to-3pn package complement to type 2sa1227 high power dissipation applications for audio frequency power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 140 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 12 a i cm collector current-peak 20 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2987 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 0.6 1.5 v v besat base-emitter saturation voltage i c =5a ;i b =0.5a 1.4 2.0 v i cbo collector cut-off current v cb =140v; i e =0 50 a i ebo emitter cut-off current v eb =3v; i c =0 50 a h fe-1 dc current gain i c =2a ; v ce =5v 60 320 h fe-2 dc current gain i c =5a ; v ce =5v 40 f t transition frequency i c =1a ; v ce =5v 50 mhz c ob collector output capacitance i e =0;f=1mhz;v cb =10v 190 pf h fe-1 classifications r q p 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SC2987 package outline fig.2 outline dimensions

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